NTHD4508NT1G specifications -Ameya360 electronic components purchase network


NTHD4508NT1G

ACTIVE EAR99
Product description : Power MOSFET 20V, 4.1A, Dual N Channel ChipFET
SPQ：1
Datasheet : NTHD4508NT1G.pdf

Rds On - Drain-Source Resistance:	80 mOhms
Width:	1.65 mm
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	1.05 mm
Vgs - Gate-Source Voltage:	12 V
Mounting Style:	SMD/SMT
Fall Time:	15 ns
Length:	3.05 mm
Manufacturer:	ON Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	10 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Product:	MOSFET Small Signal
Pd - Power Dissipation:	1.13 W
Package / Case:	ChipFET-8
Configuration:	Dual Dual Drain
Unit Weight:	0.002998 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	5 ns
Forward Transconductance - Min:	6 S
Series:	NTHD4508N
Factory Pack Quantity:	3000
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	4.1 A
Rise Time:	15 ns
Transistor Type:	2 N-Channel
ECCN	EAR99

Datasheet： NTHD4508NT1G.pdf

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Stock code :	56539
Mfg name :	onsemi
MPN :	NTHD4508NT1G
Product description :	Power MOSFET 20V, 4.1A, Dual N Channel ChipFET

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