IXXN110N65C4H1 specifications -Ameya360 electronic components purchase network


IXXN110N65C4H1

ACTIVE EAR99
Product description : GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
SPQ：1
Datasheet : IXXN110N65C4H1.pdf

Product:	IGBT Silicon Modules
Packaging:	Tube
Series:	IXXN110N65
Continuous Collector Current at 25 C:	210 A
Factory Pack Quantity:	10
Tradename:	XPT
Package / Case:	SOT-227B-4
Product Category:	IGBT Modules
Configuration:	Single Dual Emitter
Mounting Style:	SMD/SMT
Maximum Operating Temperature:	+ 175 C
Collector-Emitter Saturation Voltage:	1.98 V
Manufacturer:	IXYS
Pd - Power Dissipation:	750 W
Minimum Operating Temperature:	- 55 C
Brand:	IXYS
RoHS:	Details
Gate-Emitter Leakage Current:	100 nA
Collector- Emitter Voltage VCEO Max:	650 V
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	20 V
ECCN	EAR99

Datasheet： IXXN110N65C4H1.pdf

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Stock code :	562297
Mfg name :	IXYS Corporation
MPN :	IXXN110N65C4H1
Product description :	GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B

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