IXTY1R6N100D2 specifications -Ameya360 electronic components purchase network


IXTY1R6N100D2

ACTIVE TO-252, (D-Pak) EAR99
Product description : N-Channel 1000 V 1.6 A 10 Ω Surface Mount Power Mosfet - TO-252
SPQ：1
Datasheet : IXTY1R6N100D2.pdf

FET Feature	Depletion Mode
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Part Status	Active
Manufacturer	IXYS
Family	Transistors - FETs, MOSFETs - Single
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	10 Ohm @ 800mA, 0V
Power - Max	100W
Supplier Device Package	TO-252, (D-Pak)
Gate Charge (Qg) @ Vgs	27nC @ 5V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	645pF @ 25V
ECCN	EAR99

Datasheet： IXTY1R6N100D2.pdf

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Stock code :	562264
Mfg name :	IXYS Corporation
MPN :	IXTY1R6N100D2
Product description :	N-Channel 1000 V 1.6 A 10 Ω Surface Mount Power Mosfet - TO-252

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