IXTT2N170D2 specifications -Ameya360 electronic components purchase network


IXTT2N170D2

ACTIVE TO-268 EAR99
Product description : N-Channel 1700 V 6.5 Ohm 110 nC Depletion Mode MOSFET - TO-268
SPQ：30
Datasheet : IXTT2N170D2.pdf

FET Feature	Depletion Mode
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C	2A (Tj)
Part Status	Active
Manufacturer	IXYS
Family	Transistors - FETs, MOSFETs - Single
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	6.5 Ohm @ 1A, 0V
Power - Max	568W
Supplier Device Package	TO-268
Gate Charge (Qg) @ Vgs	110nC @ 5V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	3650pF @ 25V
ECCN	EAR99

Datasheet： IXTT2N170D2.pdf

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Stock code :	562225
Mfg name :	IXYS Corporation
MPN :	IXTT2N170D2
Product description :	N-Channel 1700 V 6.5 Ohm 110 nC Depletion Mode MOSFET - TO-268

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