IXTT16N10D2 specifications -Ameya360 electronic components purchase network


IXTT16N10D2

ACTIVE ECL99
Product description : Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns
SPQ：1
Datasheet : IXTT16N10D2.pdf

Packaging:	Tube
Qg - Gate Charge:	225 nC
Pd - Power Dissipation:	830 W
Package / Case:	TO-268-2
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	70 ns
Forward Transconductance - Min:	7 S
Series:	IXTT16N10
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	16 A
Rise Time:	43 ns
Maximum Operating Temperature:	+ 175 C
Rds On - Drain-Source Resistance:	64 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	45 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Depletion
Typical Turn-Off Delay Time:	340 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel
ECCN	ECL99

Datasheet： IXTT16N10D2.pdf

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Stock code :	562218
Mfg name :	IXYS Corporation
MPN :	IXTT16N10D2
Product description :	Transistor: N-MOSFET; unipolar; 100V; 16A; 830W; TO268; 940ns

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