IXTT11P50 specifications -Ameya360 electronic components purchase network


IXTT11P50

ACTIVE TO-268 EAR99
Product description : Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns
SPQ：1
Datasheet : IXTT11P50.pdf

FET Feature	Standard
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Part Status	Active
Manufacturer	IXYS
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	4700pF @ 25V
ECCN	EAR99
Rds On (Max) @ Id, Vgs	750 mOhm @ 5.5A, 10V
Power - Max	300W
Supplier Device Package	TO-268
Gate Charge (Qg) @ Vgs	130nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube

Datasheet： IXTT11P50.pdf

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Stock code :	562214
Mfg name :	IXYS Corporation
MPN :	IXTT11P50
Product description :	Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO268; 500ns

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