IXTQ52P10P specifications -Ameya360 electronic components purchase network


IXTQ52P10P

ACTIVE EAR99
Product description : P-Channel 100 V 52 A 50 mOhm PolarP™ Power Mosfet - TO-3P
SPQ：30
Datasheet : IXTQ52P10P.pdf

Width:	4.9 mm
Rds On - Drain-Source Resistance:	50 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-3P-3
Height:	20.1 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	22 ns
Length:	15.8 mm
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	38 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Type:	PolarP Power MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	60 nC
Pd - Power Dissipation:	300 W
Tradename:	PolarP
Vgs th - Gate-Source Threshold Voltage:	- 4 V
Configuration:	Single
Unit Weight:	0.194007 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Forward Transconductance - Min:	12 S
Series:	IXTQ52P10
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 52 A
Rise Time:	29 ns
Transistor Type:	1 P-Channel
ECCN	EAR99

Datasheet： IXTQ52P10P.pdf

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Stock code :	562195
Mfg name :	IXYS Corporation
MPN :	IXTQ52P10P
Product description :	P-Channel 100 V 52 A 50 mOhm PolarP™ Power Mosfet - TO-3P

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