IXTQ120N20P specifications -Ameya360 electronic components purchase network


IXTQ120N20P

ACTIVE EAR99
Product description : Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
SPQ：1
Datasheet : IXTQ120N20P.pdf

Width:	4.9 mm
Rds On - Drain-Source Resistance:	22 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-3P-3
Height:	20.3 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	31 ns
Length:	15.8 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	100 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	200 V
Type:	PolarHT Power MOSFET
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Qg - Gate Charge:	152 nC
Pd - Power Dissipation:	714 W
Tradename:	PolarHT
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.194007 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	30 ns
Forward Transconductance - Min:	40 S
Series:	IXTQ120N20
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	120 A
Rise Time:	35 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXTQ120N20P.pdf

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Stock code :	562171
Mfg name :	IXYS Corporation
MPN :	IXTQ120N20P
Product description :	Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P

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