IXTP60N10T specifications -Ameya360 electronic components purchase network


IXTP60N10T

ACTIVE TO-220AB EAR99
Product description : Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220-3; 59ns
SPQ：1
Datasheet : IXTP60N10T.pdf

FET Feature	Standard
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	TrenchMV™
Vgs(th) (Max) @ Id	4.5V @ 50µA
Operating Temperature	-55°C ~ 175°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	18 mOhm @ 25A, 10V
Power - Max	176W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	49nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	2650pF @ 25V
ECCN	EAR99

Datasheet： IXTP60N10T.pdf

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Stock code :	562153
Mfg name :	IXYS Corporation
MPN :	IXTP60N10T
Product description :	Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220-3; 59ns

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