IXTP3N100D2 specifications -Ameya360 electronic components purchase network


IXTP3N100D2

ACTIVE TO-220AB EAR99
Product description : Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220-3; 17ns
SPQ：1
Datasheet : IXTP3N100D2.pdf

FET Feature	Depletion Mode
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Part Status	Active
Manufacturer	IXYS
Family	Transistors - FETs, MOSFETs - Single
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	5.5 Ohm @ 1.5A, 0V
Power - Max	125W
Supplier Device Package	TO-220AB
Gate Charge (Qg) @ Vgs	37.5nC @ 5V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	1020pF @ 25V
ECCN	EAR99

Datasheet： IXTP3N100D2.pdf

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Stock code :	562136
Mfg name :	IXYS Corporation
MPN :	IXTP3N100D2
Product description :	Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220-3; 17ns

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