IXTP120P065T specifications -Ameya360 electronic components purchase network


IXTP120P065T

ACTIVE EAR99
Product description : Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
SPQ：1
Datasheet : IXTP120P065T.pdf

Packaging:	Tube
Qg - Gate Charge:	185 nC
Pd - Power Dissipation:	298 W
Package / Case:	TO-220-3
Vgs - Gate-Source Voltage:	15 V
Mounting Style:	Through Hole
Fall Time:	21 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	38 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 65 V
Transistor Type:	1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	10 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.081130 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	31 ns
Series:	IXTP120P065
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 120 A
Rise Time:	28 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTP120P065T.pdf

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Stock code :	562104
Mfg name :	IXYS Corporation
MPN :	IXTP120P065T
Product description :	Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns

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