IXTN200N10L2 | ||
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Product description : N-Channel 100 V 11 mOhm 540 nC 830 W Power MOSFET - SOT-227 | ||
SPQ:300 | ||
Datasheet : |
Number of Channels: | 1 Channel |
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Forward Transconductance - Min: | 90 S/55 S |
Manufacturer: | IXYS |
Pd - Power Dissipation: | 830 W |
Factory Pack Quantity: | 10 |
Brand: | IXYS |
Package / Case: | SOT-227-4 |
Id - Continuous Drain Current: | 178 A |
Vgs - Gate-Source Voltage: | 20 V |
Transistor Type: | 1 N-Channel |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tube |
Rds On - Drain-Source Resistance: | 11 mOhms |
Series: | IXTN200N10 |
Transistor Polarity: | N-Channel |
Technology: | Si |
RoHS: | Details |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Unit Weight: | 1.340411 oz |
Mounting Style: | SMD/SMT |
ECCN | EAR99 |
Datasheet: |
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Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 290 | Update On 2025-06-13 |
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Lead-Time | -- | |
SPQ/MOQ | 300/1 | |
Location | -- | |
DateCode | 2442 |
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