IXTH24N50L specifications -Ameya360 electronic components purchase network


IXTH24N50L

ACTIVE EAR99
Product description : Single N-Channel 500 V 300 mOhm 300 W Power Mosfet - TO-247 AD
SPQ：30
Datasheet : IXTH24N50L.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	300 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	35 ns
Forward Transconductance - Min:	3 S
Series:	IXTH24N50
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	24 A
Rise Time:	85 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	160 nC
Pd - Power Dissipation:	400 W
Package / Case:	TO-247-3
Height:	21.46 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	75 ns
Length:	16.26 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	110 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Type:	Linear Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTH24N50L.pdf

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Stock code :	562014
Mfg name :	IXYS Corporation
MPN :	IXTH24N50L
Product description :	Single N-Channel 500 V 300 mOhm 300 W Power Mosfet - TO-247 AD

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