IXTH10P50P
IXTH10P50P
  • ACTIVE
  • EAR99
Product description : Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
SPQ:1
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Width: 5.3 mm
Rds On - Drain-Source Resistance: 1 Ohms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: - 4 V
Configuration: Single
Unit Weight: 0.229281 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 20 ns
Forward Transconductance - Min: 6.5 S
Series: IXTH10P50
Factory Pack Quantity: 30
Brand: IXYS
RoHS:  Details
Id - Continuous Drain Current: - 10 A
Rise Time: 28 ns
Transistor Type: 1 P-Channel
ECCN EAR99
Packaging: Tube
Qg - Gate Charge: 50 nC
Pd - Power Dissipation: 300 W
Package / Case: TO-247-3
Height: 21.45 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 44 ns
Length: 16.24 mm
Manufacturer: IXYS
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 52 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 500 V
Type: PolarP Power MOSFET
Maximum Operating Temperature: + 150 C
Datasheet:
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Supplier Code:SP1027

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$13.9314

115.70930

stock146Update On
2025-02-10
Lead-Time0Weeks
Supplier SPQ/MOQ1/8
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