IXTA76P10T specifications -Ameya360 electronic components purchase network


IXTA76P10T

ACTIVE TO-263 (IXTA) EAR99
Product description : P-Channel 100 V 298 W 197 nC TrenchP Power Mosfet Surface Mount - TO-263AA
SPQ：1
Datasheet : IXTA76P10T.pdf

FET Feature	Standard
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	TrenchP™
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	25 mOhm @ 500mA, 10V
Power - Max	298W
Supplier Device Package	TO-263 (IXTA)
Gate Charge (Qg) @ Vgs	197nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	13700pF @ 25V
ECCN	EAR99

Datasheet： IXTA76P10T.pdf

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Stock code :	561978
Mfg name :	IXYS Corporation
MPN :	IXTA76P10T
Product description :	P-Channel 100 V 298 W 197 nC TrenchP Power Mosfet Surface Mount - TO-263AA

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