IXKH47N60C specifications -Ameya360 electronic components purchase network


IXKH47N60C

ACTIVE EAR99
Product description : Single N-Channel 600 V 70 mOhm Power Mosfet - TO-247
SPQ：30
Datasheet : IXKH47N60C.pdf

Width:	5.3 mm
Rds On - Drain-Source Resistance:	60 mOhms
Minimum Operating Temperature:	- 55 C
Tradename:	COOLMOS
Vgs th - Gate-Source Threshold Voltage:	4 V
Configuration:	Single
Unit Weight:	0.229281 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	20 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	111 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Type:	CoolMOS Power MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	255 nC
Technology:	Si
Package / Case:	TO-247-3
Height:	21.45 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	10 ns
Length:	16.24 mm
Series:	IXKH47N60
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	47 A
Rise Time:	27 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXKH47N60C.pdf

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Stock code :	561911
Mfg name :	IXYS Corporation
MPN :	IXKH47N60C
Product description :	Single N-Channel 600 V 70 mOhm Power Mosfet - TO-247

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