IXFX48N60P specifications -Ameya360 electronic components purchase network


IXFX48N60P

ACTIVE EAR99
Product description : Single N-Channel 600 V 135 mOhm 830 W Power Mosfet - PLUS247
SPQ：30
Datasheet : IXFX48N60P.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	135 mOhms
Pd - Power Dissipation:	830 W
Tradename:	HyperFET
Height:	21.34 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	22 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	85 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.257500 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	30 ns
Forward Transconductance - Min:	53 S
Series:	IXFX48N60
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	48 A
Rise Time:	25 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFX48N60P.pdf

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Stock code :	561795
Mfg name :	IXYS Corporation
MPN :	IXFX48N60P
Product description :	Single N-Channel 600 V 135 mOhm 830 W Power Mosfet - PLUS247

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