IXFX230N20T
  • 量产中
  • EAR99
产品描述:
N Channel 200 V 230 A 7.5 mΩ Through Hole GigaMOS Power Mosfet - PLUS-247
标准包装:30
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Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 7.5 mOhms
Series: IXFX230N20
Minimum Operating Temperature: - 55 C
Channel Mode: Enhancement
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 175 C
Packaging: Tube
Manufacturer: IXYS
Pd - Power Dissipation: 1.67 kW
Transistor Polarity: N-Channel
Factory Pack Quantity: 30
Brand: IXYS
Package / Case: TO-247-3
Id - Continuous Drain Current: 230 A
Configuration: Single
Unit Weight: 0.257500 oz
Mounting Style: Through Hole
ECCN EAR99
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