IXFX230N20T
  • ACTIVE
  • EAR99
Product description : N Channel 200 V 230 A 7.5 mΩ Through Hole GigaMOS Power Mosfet - PLUS-247
SPQ:30
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Number of Channels: 1 Channel
Rds On - Drain-Source Resistance: 7.5 mOhms
Series: IXFX230N20
Minimum Operating Temperature: - 55 C
Channel Mode: Enhancement
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
Maximum Operating Temperature: + 175 C
Packaging: Tube
Manufacturer: IXYS
Pd - Power Dissipation: 1.67 kW
Transistor Polarity: N-Channel
Factory Pack Quantity: 30
Brand: IXYS
Package / Case: TO-247-3
Id - Continuous Drain Current: 230 A
Configuration: Single
Unit Weight: 0.257500 oz
Mounting Style: Through Hole
ECCN EAR99
Datasheet:
You can comment after logging in.

Please enter the verification code in the image below:

verification code