IXFX120N30T specifications -Ameya360 electronic components purchase network


IXFX120N30T

ACTIVE PLUS247™-3 EAR99
Product description : N-Channel 300 V 120 A 24 mΩ Through Hole GigaMOS Power Mosfet - PLUS247
SPQ：30
Datasheet : IXFX120N30T.pdf

FET Feature	Standard
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	GigaMOS™
Vgs(th) (Max) @ Id	5V @ 4mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	24 mOhm @ 60A, 10V
Power - Max	960W
Supplier Device Package	PLUS247™-3
Gate Charge (Qg) @ Vgs	265nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	20000pF @ 25V
ECCN	EAR99

Datasheet： IXFX120N30T.pdf

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Stock code :	561774
Mfg name :	IXYS Corporation
MPN :	IXFX120N30T
Product description :	N-Channel 300 V 120 A 24 mΩ Through Hole GigaMOS Power Mosfet - PLUS247

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