IXFT50N60P3 specifications -Ameya360 electronic components purchase network


IXFT50N60P3

ACTIVE TO-268 ECL99
Product description : IXFT50N60P3 , N沟道 MOSFET 晶体管, 50 A, Vds=600 V, 3针 TO-268封装
SPQ：30
Datasheet : IXFT50N60P3.pdf

FET Feature	Standard
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Part Status	Active
Manufacturer	IXYS
Series	HiPerFET™, Polar3™
Vgs(th) (Max) @ Id	5V @ 4mA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	145 mOhm @ 500mA, 10V
Power - Max	1040W
Supplier Device Package	TO-268
Gate Charge (Qg) @ Vgs	94nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	6300pF @ 25V
ECCN	ECL99

Datasheet： IXFT50N60P3.pdf

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Stock code :	561758
Mfg name :	IXYS Corporation
MPN :	IXFT50N60P3
Product description :	IXFT50N60P3 , N沟道 MOSFET 晶体管, 50 A, Vds=600 V, 3针 TO-268封装

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