IXFN64N60P specifications -Ameya360 electronic components purchase network


IXFN64N60P

ACTIVE EAR99
Product description : Single N-Channel 600 Vds 50 A 96 mOhm Power Mosfet - SOT-227B
SPQ：10
Datasheet : IXFN64N60P.pdf

Width:	25.07 mm
Rds On - Drain-Source Resistance:	96 mOhms
Pd - Power Dissipation:	700 W
Tradename:	HyperFET
Height:	9.6 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	SMD/SMT
Fall Time:	24 ns
Length:	38.2 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	79 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	600 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOT-227-4
Configuration:	Single Dual Source
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	28 ns
Forward Transconductance - Min:	63 S
Series:	IXFN64N60
Factory Pack Quantity:	10
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	50 A
Rise Time:	23 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFN64N60P.pdf

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Stock code :	561685
Mfg name :	IXYS Corporation
MPN :	IXFN64N60P
Product description :	Single N-Channel 600 Vds 50 A 96 mOhm Power Mosfet - SOT-227B

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