IXFN32N100P specifications -Ameya360 electronic components purchase network


IXFN32N100P

ACTIVE EAR99
Product description : N-Channel 1000 V 27 A 320 mOhm Mosfet - SOT-227B
SPQ：10
Datasheet : IXFN32N100P.pdf

Width:	25.42 mm
Rds On - Drain-Source Resistance:	320 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOT-227-4
Height:	12.22 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	SMD/SMT
Fall Time:	43 ns
Length:	38.23 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	76 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1000 V
Type:	Polar Power MOSFET HiPerFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Qg - Gate Charge:	225 nC
Pd - Power Dissipation:	690 W
Tradename:	Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	6.5 V
Configuration:	Single Dual Source
Unit Weight:	1.340411 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	50 ns
Forward Transconductance - Min:	13 S
Series:	IXFN32N100
Factory Pack Quantity:	10
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	27 A
Rise Time:	55 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFN32N100P.pdf

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