| IXFN210N20P | ||
|---|---|---|
|
|
||
|
||
| Product description : Single N-Channel 200 V 1070 W 255 nC Polar HyPerFET Mosfet - TO-227B | ||
| SPQ：10 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Number of Channels: | 1 Channel |
|---|---|
| Rds On - Drain-Source Resistance: | 10.5 mOhms |
| Series: | IXFN210N20 |
| Pd - Power Dissipation: | 1.07 kW |
| Factory Pack Quantity: | 10 |
| Brand: | IXYS |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Manufacturer: | IXYS |
| Minimum Operating Temperature: | - 55 C |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Tradename: | HyperFET |
| Package / Case: | SOT-227-4 |
| Id - Continuous Drain Current: | 188 A |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
| Datasheet： |
|---|
You can comment after logging in.
Availability2Request Stock Notification
Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
| stock | 300 | Update On 2025-08-19 |
|---|---|---|
| Lead-Time | -- | |
| SPQ/MOQ | 10/10 | |
| Location | -- | |
| DateCode | 2507 |
Please enter the verification code in the image below：