IXFN132N50P3 specifications -Ameya360 electronic components purchase network


IXFN132N50P3

ACTIVE EAR99
Product description : Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227
SPQ：1
Datasheet : IXFN132N50P3.pdf

Packaging:	Tube
Qg - Gate Charge:	250 nC
Technology:	Si
Package / Case:	SOT-227-4
Configuration:	Single
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Forward Transconductance - Min:	115 S, 68 S
Series:	IXFN132N50
Factory Pack Quantity:	10
RoHS:	Details
Id - Continuous Drain Current:	112 A
Vds - Drain-Source Breakdown Voltage:	500 V
ECCN	EAR99
Rds On - Drain-Source Resistance:	39 mOhms
Pd - Power Dissipation:	1.5 kW
Tradename:	HyperFET
Vgs th - Gate-Source Threshold Voltage:	5 V
Vgs - Gate-Source Voltage:	30 V
Unit Weight:	1.340411 oz
Fall Time:	8 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Brand:	IXYS
Product Category:	MOSFET
Rise Time:	9 ns
Transistor Type:	1 N-Channel

Datasheet： IXFN132N50P3.pdf

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Stock code :	561642
Mfg name :	IXYS Corporation
MPN :	IXFN132N50P3
Product description :	Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227

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