IXFK360N10T specifications -Ameya360 electronic components purchase network


IXFK360N10T

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
SPQ：1
Datasheet : IXFK360N10T.pdf

Packaging:	Tube
Qg - Gate Charge:	525 nC
Pd - Power Dissipation:	1.25 kW
Tradename:	HiPerFET
Vgs th - Gate-Source Threshold Voltage:	2.5 V to 4.5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	160 ns
Forward Transconductance - Min:	180 S
Series:	IXFK360N10
Factory Pack Quantity:	25
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	360 A
Rise Time:	100 ns
Maximum Operating Temperature:	+ 175 C
Rds On - Drain-Source Resistance:	2.9 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-264-3
Configuration:	Single
Unit Weight:	0.264555 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	47 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	80 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFK360N10T.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	561605
Mfg name :	IXYS Corporation
MPN :	IXFK360N10T
Product description :	Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：