| IXFK32N100Q3 | ||
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| 产品描述：
N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264
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| 标准包装：1 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Rds On - Drain-Source Resistance: | 320 mOhms |
| Manufacturer: | IXYS |
| Pd - Power Dissipation: | 1.25 kW |
| Factory Pack Quantity: | 25 |
| Brand: | IXYS |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1000 V |
| Configuration: | Single |
| Unit Weight: | 0.264555 oz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 195 nC |
| Series: | IXFK32N100 |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Tradename: | HyperFET |
| Package / Case: | TO-264-3 |
| Id - Continuous Drain Current: | 32 A |
| Rise Time: | 250 ns |
| Vgs - Gate-Source Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
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