IXFB100N50Q3 specifications -Ameya360 electronic components purchase network


IXFB100N50Q3

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
SPQ：1
Datasheet : IXFB100N50Q3.pdf

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	49 mOhms
Manufacturer:	IXYS
Pd - Power Dissipation:	1.56 kW
Factory Pack Quantity:	25
Brand:	IXYS
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Configuration:	Single
Unit Weight:	0.056438 oz
Mounting Style:	Through Hole
Packaging:	Tube
Qg - Gate Charge:	255 nC
Series:	IXFB100N50
Transistor Polarity:	N-Channel
Technology:	Si
Tradename:	HyperFET
Package / Case:	TO-247-3
Id - Continuous Drain Current:	100 A
Rise Time:	250 ns
Vgs - Gate-Source Voltage:	30 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFB100N50Q3.pdf

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Stock code :	561465
Mfg name :	IXYS Corporation
MPN :	IXFB100N50Q3
Product description :	Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™

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