IXFA4N100Q specifications -Ameya360 electronic components purchase network


IXFA4N100Q

ACTIVE EAR99
Product description : Single N-Channel 1000 Vds 3 Ohm 39 nC 150 W Mosfet - TO-263
SPQ：50
Datasheet : IXFA4N100Q.pdf

Width:	9.65 mm
Rds On - Drain-Source Resistance:	3 Ohms
Pd - Power Dissipation:	150 W
Tradename:	HyperFET
Height:	4.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	18 ns
Length:	10.41 mm
Series:	IXFA4N100
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	4 A
Rise Time:	15 ns
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	17 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	32 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1000 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IXFA4N100Q.pdf

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Stock code :	561459
Mfg name :	IXYS Corporation
MPN :	IXFA4N100Q
Product description :	Single N-Channel 1000 Vds 3 Ohm 39 nC 150 W Mosfet - TO-263

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