IXFA4N100P specifications -Ameya360 electronic components purchase network


IXFA4N100P

ACTIVE EAR99
Product description : N-Channel 1000 V 3.3 Ohm Power MOSFET - TO-263
SPQ：50
Datasheet : IXFA4N100P.pdf

Width:	10.41 mm
Rds On - Drain-Source Resistance:	3.3 Ohms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-252-3
Height:	4.83 mm
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	24 ns
Forward Transconductance - Min:	1.8 S
Series:	IXFA4N100
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	4 A
Rise Time:	36 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	26 nC
Pd - Power Dissipation:	150 W
Tradename:	Polar, HiPerFET
Vgs th - Gate-Source Threshold Voltage:	6 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	50 ns
Length:	9.65 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	37 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	1000 V
Type:	Polar HiPerFET Power MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： IXFA4N100P.pdf

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Stock code :	561458
Mfg name :	IXYS Corporation
MPN :	IXFA4N100P
Product description :	N-Channel 1000 V 3.3 Ohm Power MOSFET - TO-263

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