IXDR30N120D1
IXDR30N120D1
  • ACTIVE
  • ECL99
Product description : Transistor: IGBT; NPT; 1.2kV; 30A; 200W; ISOPLUS247™
SPQ:30
Datasheet :
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Collector-Emitter Saturation Voltage: 2.4 V
Packaging: Tube
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 200 W
Gate-Emitter Leakage Current: 500 nA
Height: 21.34 mm
Unit Weight: 0.186952 oz
Continuous Collector Current Ic Max: 60 A
Continuous Collector Current: 50 A
Series: IXDR30N120
Brand: IXYS
Product Category: IGBT Transistors
Maximum Gate Emitter Voltage: +/- 20 V
ECCN ECL99
Width: 5.21 mm
Continuous Collector Current at 25 C: 50 A
Operating Temperature Range: - 55 C to + 150 C
Tradename: ISOPLUS
Package / Case: ISOPLUS247-3
Configuration: Single
Mounting Style: Through Hole
Length: 16.13 mm
Manufacturer: IXYS
Factory Pack Quantity: 30
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 1.2 kV
Maximum Operating Temperature: + 150 C
Datasheet:
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