IXDN55N120D1 specifications -Ameya360 electronic components purchase network


IXDN55N120D1

ACTIVE EAR99
Product description : Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
SPQ：10
Datasheet : IXDN55N120D1.pdf

Collector-Emitter Saturation Voltage:	2.3 V
Packaging:	Tube
Continuous Collector Current:	100 A
Manufacturer:	IXYS
Minimum Operating Temperature:	- 40 C
Brand:	IXYS
Package / Case:	SOT-227B-4
Collector- Emitter Voltage VCEO Max:	1200 V
Configuration:	Single Dual Emitter
Mounting Style:	SMD/SMT
Maximum Operating Temperature:	+ 150 C
Width:	25.42 mm
Continuous Collector Current Ic Max:	100 A
Length:	38.23 mm
Series:	IXDN55N120
Factory Pack Quantity:	10
RoHS:	Details
Product Category:	IGBT Transistors
Height:	9.6 mm
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	+/- 20 V
ECCN	EAR99

Datasheet： IXDN55N120D1.pdf

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Stock code :	561418
Mfg name :	IXYS Corporation
MPN :	IXDN55N120D1
Product description :	Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B

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