| IXDN55N120D1 | ||
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| 产品描述：
Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
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| 标准包装：10 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.3 V |
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| Packaging: | Tube |
| Continuous Collector Current: | 100 A |
| Manufacturer: | IXYS |
| Minimum Operating Temperature: | - 40 C |
| Brand: | IXYS |
| Package / Case: | SOT-227B-4 |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Configuration: | Single Dual Emitter |
| Mounting Style: | SMD/SMT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 25.42 mm |
| Continuous Collector Current Ic Max: | 100 A |
| Length: | 38.23 mm |
| Series: | IXDN55N120 |
| Factory Pack Quantity: | 10 |
| RoHS: | Details |
| Product Category: | IGBT Transistors |
| Height: | 9.6 mm |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| ECCN | EAR99 |
| 数据手册： |
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