IRFR1205TRLPBF specifications -Ameya360 electronic components purchase network


IRFR1205TRLPBF

ACTIVE EAR99
Product description : Single N-Channel 55V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA
SPQ：1
Datasheet : IRFR1205TRLPBF.pdf

Packaging:	Reel
Qg - Gate Charge:	65 nC
Pd - Power Dissipation:	107 W
Package / Case:	TO-252-3
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	7.3 ns
Manufacturer:	Infineon
Factory Pack Quantity:	3000
Typical Turn-Off Delay Time:	47 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	55 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	27 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	60 ns
Forward Transconductance - Min:	17 S
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	44 A
Rise Time:	69 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IRFR1205TRLPBF.pdf

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Stock code :	558207
Mfg name :	Infineon Technologies
MPN :	IRFR1205TRLPBF
Product description :	Single N-Channel 55V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA

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