IRF7317PBF specifications -Ameya360 electronic components purchase network


IRF7317PBF

ACTIVE EAR99
Product description : IRF7317PBF, 双 N/P沟道 MOSFET 晶体管, Vds=20 V, 8针 SOIC封装
SPQ：3800
Datasheet : IRF7317PBF.pdf

Packaging:	Tube
Qg - Gate Charge:	18 nC
Pd - Power Dissipation:	2 W
Package / Case:	SOIC-8
Vgs - Gate-Source Voltage:	12 V
Mounting Style:	SMD/SMT
Fall Time:	31 ns, 49 ns
Manufacturer:	Infineon
Factory Pack Quantity:	95
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	6.6 A
Rise Time:	17 ns, 40 ns
Type:	Power Mosfet
ECCN	EAR99
Rds On - Drain-Source Resistance:	29 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Dual Dual Drain
Unit Weight:	0.019048 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	8.1 ns, 15 ns
Transistor Polarity:	N-Channel, P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	38 ns, 42 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	20 V
Transistor Type:	1 N-Channel, 1 P-Channel
Maximum Operating Temperature:	+ 150 C

Datasheet： IRF7317PBF.pdf

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Stock code :	557875
Mfg name :	Infineon Technologies
MPN :	IRF7317PBF
Product description :	IRF7317PBF, 双 N/P沟道 MOSFET 晶体管, Vds=20 V, 8针 SOIC封装

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