IPP041N04N G specifications -Ameya360 electronic components purchase network

Width:	4.57 mm
Rds On - Drain-Source Resistance:	4.1 mOhms
Pd - Power Dissipation:	94 W
Tradename:	OptiMOS
Height:	9.45 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	4.8 ns
Length:	10.36 mm
Series:	OptiMOS 3
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	23 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Transistor Type:	1 N-Channel
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	16 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	IPP041N04NGXK IPP041N04NGXKSA1 SP000680790
RoHS:	Details
Id - Continuous Drain Current:	80 A
Rise Time:	3.8 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IPP041N04N G.pdf

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