IPD80R1K0CEATMA1 specifications -Ameya360 electronic components purchase network


IPD80R1K0CEATMA1

ACTIVE PG-TO252-3 EAR99
Product description : N-Channel 800 V 0.95 Ω 31 nC CoolMOS CE Power Transistor - DPAK
SPQ：1
Datasheet : IPD80R1K0CEATMA1.pdf

FET Feature	Standard
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
Vgs(th) (Max) @ Id	3.9V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	950 mOhm @ 3.6A, 10V
Power - Max	83W
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) @ Vgs	31nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	785pF @ 100V
ECCN	EAR99

Datasheet： IPD80R1K0CEATMA1.pdf

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Stock code :	557284
Mfg name :	Infineon Technologies
MPN :	IPD80R1K0CEATMA1
Product description :	N-Channel 800 V 0.95 Ω 31 nC CoolMOS CE Power Transistor - DPAK

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