IPA180N10N3 G specifications -Ameya360 electronic components purchase network


IPA180N10N3 G

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Product description : IPA180N10N3 G , N沟道 MOSFET 晶体管, 28 A, Vds=100 V, 3针 TO-220封装
SPQ：5
Datasheet : IPA180N10N3 G.pdf

Width:	4.85 mm
Rds On - Drain-Source Resistance:	18 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	11 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	IPA180N10N3GXK IPA180N10N3GXKSA1 SP000480108
RoHS:	Details
Id - Continuous Drain Current:	28 A
Rise Time:	5 ns
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Qg - Gate Charge:	7 nC
Pd - Power Dissipation:	30 W
Tradename:	OptiMOS
Height:	9.83 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	3 ns
Length:	10.65 mm
Series:	OptiMOS 3
Factory Pack Quantity:	500
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	18 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel

Datasheet： IPA180N10N3 G.pdf

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Stock code :	556995
Mfg name :	Infineon Technologies
MPN :	IPA180N10N3 G
Product description :	IPA180N10N3 G , N沟道 MOSFET 晶体管, 28 A, Vds=100 V, 3针 TO-220封装

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