IKW50N65F5FKSA1 specifications -Ameya360 electronic components purchase network


IKW50N65F5FKSA1

ACTIVE EAR99
Product description : IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3
SPQ：1
Datasheet : IKW50N65F5FKSA1.pdf

Collector-Emitter Saturation Voltage:	1.6 V
Continuous Collector Current Ic Max:	56 A
Series:	IKW50N65
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity:	240
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Manufacturer:	Infineon
Pd - Power Dissipation:	305 W
Minimum Operating Temperature:	- 40 C
Part # Aliases:	IKW50N65F5 SP000973420
RoHS:	Details
Gate-Emitter Leakage Current:	100 nA
Collector- Emitter Voltage VCEO Max:	650 V
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	20 V
ECCN	EAR99

Datasheet： IKW50N65F5FKSA1.pdf

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Stock code :	555774
Mfg name :	Infineon Technologies
MPN :	IKW50N65F5FKSA1
Product description :	IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3

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