IKW25N120H3 specifications -Ameya360 electronic components purchase network


IKW25N120H3

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Product description : Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; Series: H3
SPQ：1
Datasheet : IKW25N120H3.pdf

Collector-Emitter Saturation Voltage:	2.05 V
Continuous Collector Current Ic Max:	50 A
Series:	IKW25N120
Continuous Collector Current at 25 C:	50 A
Factory Pack Quantity:	240
Brand:	Infineon Technologies
Package / Case:	TO-247-3
Product Category:	IGBT Transistors
Configuration:	Single
Mounting Style:	Through Hole
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Manufacturer:	Infineon
Pd - Power Dissipation:	326 W
Minimum Operating Temperature:	- 40 C
Part # Aliases:	IKW25N120H3FKSA1 IKW25N120H3XK SP000674418
RoHS:	Details
Gate-Emitter Leakage Current:	600 nA
Collector- Emitter Voltage VCEO Max:	1200 V
Unit Weight:	1.340411 oz
Maximum Gate Emitter Voltage:	+/- 20 V

Datasheet： IKW25N120H3.pdf

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Stock code :	555763
Mfg name :	Infineon Technologies
MPN :	IKW25N120H3
Product description :	Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; Series: H3

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