MBT3946DW1T1G specifications -Ameya360 electronic components purchase network


MBT3946DW1T1G

ACTIVE EAR99
Product description : MBT Series 40 V 200 mA NPN/PNP Silicon Dual General Purpose Transistor - SOT-363
SPQ：3000
Datasheet : MBT3946DW1T1G.pdf

Packaging:	Reel
Width:	1.25 mm
Minimum Operating Temperature:	- 55 C
Package / Case:	SC-70-6
Gain Bandwidth Product fT:	250 MHz, 300 MHz
Unit Weight:	0.000988 oz
Emitter- Base Voltage VEBO:	6 V at NPN, 5 V at PNP
Length:	2 mm
DC Collector/Base Gain hfe Min:	40
Series:	MBT3946DW1T1
Factory Pack Quantity:	3000
Part # Aliases:	MBT3946DW1T2G
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Collector- Base Voltage VCBO:	40 V, 60 V
Collector-Emitter Saturation Voltage:	- 0.4 V, + 0.3 V
Pd - Power Dissipation:	150 mW
Height:	0.9 mm
Configuration:	Dual
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	0.2 A
Continuous Collector Current:	0.2 A
Manufacturer:	ON Semiconductor
Transistor Polarity:	NPN
Brand:	ON Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	40 V
ECCN	EAR99

Datasheet： MBT3946DW1T1G.pdf

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Stock code :	54688
Mfg name :	onsemi
MPN :	MBT3946DW1T1G
Product description :	MBT Series 40 V 200 mA NPN/PNP Silicon Dual General Purpose Transistor - SOT-363

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