FQP16N25 specifications -Ameya360 electronic components purchase network


FQP16N25

ACTIVE EAR99
Product description : 250V, 16A, 230mΩ, N-Channel QFET MOSFET
SPQ：1000
Datasheet : FQP16N25.pdf

Rds On - Drain-Source Resistance:	230 mOhms
Width:	4.7 mm
Pd - Power Dissipation:	50 W
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.063493 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	17 ns
Forward Transconductance - Min:	18 S
Series:	QFET
Factory Pack Quantity:	1000
Brand:	Fairchild Semiconductor
Typical Turn-Off Delay Time:	45 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	250 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Bulk
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	9.4 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	75 ns
Length:	10.1 mm
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	FQP16N25_NL
RoHS:	Details
Id - Continuous Drain Current:	16 A
Rise Time:	140 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： FQP16N25.pdf

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