FJP13007H2TU specifications -Ameya360 electronic components purchase network


FJP13007H2TU

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Product description : Transistor: NPN; bipolar; 400V; 8A; 80W; TO220-3
SPQ：1
Datasheet : FJP13007H2TU.pdf

Collector- Base Voltage VCBO:	700 V
Collector-Emitter Saturation Voltage:	1 V
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-220-3
Gain Bandwidth Product fT:	4 MHz
Unit Weight:	0.063493 oz
Emitter- Base Voltage VEBO:	9 V
Length:	10.67 mm (Max)
DC Collector/Base Gain hfe Min:	26
Series:	FJP13007
Factory Pack Quantity:	1000
Part # Aliases:	FJP13007H2TU_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	4.83 mm (Max)
Packaging:	Bulk
Pd - Power Dissipation:	80 W
Height:	9.4 mm (Max)
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	8 A
Continuous Collector Current:	8 A
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	NPN
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	400 V

Datasheet： FJP13007H2TU.pdf

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Stock code :	530889
Mfg name :	onsemi
MPN :	FJP13007H2TU
Product description :	Transistor: NPN; bipolar; 400V; 8A; 80W; TO220-3

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