FDMC86102
  • ACTIVE
  • EAR99
Product description : N-Channel 100 V 24 mOhm Surface Mount Power Trench® Mosfet - Power 33
SPQ:1
Datasheet :
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Rds On - Drain-Source Resistance: 32.8 mOhms
Width: 3.3 mm
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 1.05 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 4 ns
Length: 3.3 mm
Manufacturer: Fairchild Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 14 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Type: Power Trench MOSFET
Maximum Operating Temperature: + 150 C
Packaging: Reel
Qg - Gate Charge: 8 nC, 13 nC
Pd - Power Dissipation: 2.3 W
Package / Case: MLP-8
Configuration: Single Quad Drain Triple Source
Unit Weight: 0.001133 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 8 ns
Forward Transconductance - Min: 19 S
Series: PowerTrench
Factory Pack Quantity: 3000
Brand: Fairchild Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 20 A
Rise Time: 4 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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