EMG1T2R specifications -Ameya360 electronic components purchase network


EMG1T2R
1 (Unlimited)
ACTIVE EMT5
Product description : TRANS 2NPN PREBIAS 0.15W EMT5
SPQ：1
Datasheet : EMG1T2R(CN).pdf EMG1T2R(EN).pdf EMG1T2R(JP).pdf

Resistor - Base (R1) (Ohms)	22k
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Power - Max	150mW
Resistor - Emitter Base (R2) (Ohms)	22k
Current - Collector (Ic) (Max)	100mA
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 5mA, 5V
Categories	Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Frequency - Transition	250MHz
Package / Case	6-SMD (5 Leads), Flat Lead
Transistor Type	2 NPN - Pre-Biased (Dual)
Supplier Device Package	EMT5
Part Status	Active
Manufacturer	Rohm Semiconductor
Family	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Packaging	Tape & Reel (TR)
Resistor - Base (R1)	22 kOhms
Base Part Number	*MG1

Datasheet： EMG1T2R(CN).pdf EMG1T2R(EN).pdf EMG1T2R(JP).pdf

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