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| 产品描述：
Transistor: N-MOSFET; unipolar; 20V; 3.4A; 0.8W; SOT23
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 800mW |
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| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3.6A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 594.3pF @ 10V |
| ECCN | EAR99 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| FET Feature | Standard |
| Supplier Device Package | SOT-23-3 |
| Gate Charge (Qg) @ Vgs | 7nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 1V @ 50µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
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