DMG4511SK4-13 specifications -Ameya360 electronic components purchase network


DMG4511SK4-13

ACTIVE EAR99
Product description : Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
SPQ：1
Datasheet : DMG4511SK4-13.pdf

Qg - Gate Charge:	18.7 nC
Packaging:	Reel
Pd - Power Dissipation:	1.54 W
Package / Case:	TO-252-4
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	5.4 ns
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel, P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	33.2 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	35 V, 35 V
Transistor Type:	1 N-Channel, 1 P-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	65 mOhms, 65 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	1 N-Channel, 1 P-Channel
Mounting Style:	SMD/SMT
Fall Time:	35.6 ns
Forward Transconductance - Min:	4.5 S
Series:	DMG4511
Factory Pack Quantity:	2500
Brand:	Diodes Incorporated
RoHS:	Details
Id - Continuous Drain Current:	5.3 A, 5 A
Rise Time:	2.8 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： DMG4511SK4-13.pdf

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Stock code :	489035
Mfg name :	Diodes Incorporated
MPN :	DMG4511SK4-13
Product description :	Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V

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