DMG4496SSS-13
  • 量产中
  • ECL99
产品描述:
DMG4496SSS-13 , N沟道 MOSFET 晶体管, 10 A, Vds=30 V, 8针 SOIC封装
标准包装:1
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Rds On - Drain-Source Resistance: 16 mOhms
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Configuration: Single
Unit Weight: 0.002610 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 4.76 ns
Manufacturer: Diodes Incorporated
Transistor Polarity: N-Channel
Brand: Diodes Incorporated
RoHS:  Details
Id - Continuous Drain Current: 10 A
Rise Time: 3.64 ns
Maximum Operating Temperature: + 150 C
Packaging: Reel
Qg - Gate Charge: 4.7 nC
Pd - Power Dissipation: 1.42 W
Package / Case: SOIC-8
Vgs - Gate-Source Voltage: 25 V
Mounting Style: SMD/SMT
Fall Time: 4.9 ns
Forward Transconductance - Min: 11.7 S
Series: DMG4496
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 4.9 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Transistor Type: 1 N-Channel
ECCN ECL99
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