SIS322DNT-T1-GE3 specifications -Ameya360 electronic components purchase network


SIS322DNT-T1-GE3

ACTIVE PowerPAK® 1212-8
Product description : MOSFET N-CH 30V 38.3A 1212-8
SPQ：1
Datasheet : SIS322DNT-T1-GE3.pdf

FET Feature	Logic Level Gate
Package / Case	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	38.3A (Tc)
Product Training Modules	30 V TrenchFET Gen IV MOSFET and PowerPAIR
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2.4V @ 250µA
Packaging	Digi-Reel®
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 10A, 10V
Power - Max	19.8W
Supplier Device Package	PowerPAK® 1212-8
Gate Charge (Qg) @ Vgs	21.5nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	TrenchFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1000pF @ 15V
RoHS	Lead free / RoHS Compliant

Datasheet： SIS322DNT-T1-GE3.pdf

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P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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