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| 产品描述：
Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 6-LSOP (0.063", 1.60mm Width) |
| Power - Max | 2W |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) @ Vgs | 4.8nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 560pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 8.2A, 10V |
| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Packaging | Digi-Reel® |
| 数据手册： |
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