BSO110N03MSGXUMA1
BSO110N03MSGXUMA1
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Product description : Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
SPQ:1
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Packaging: Reel
Qg - Gate Charge: 10 nC
Pd - Power Dissipation: 1.56 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 1 V
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 4.4 ns
Forward Transconductance - Min: 16 S
Series: BSO110N03
Factory Pack Quantity: 2500
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 9.5 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Transistor Type: 1 N-Channel
Rds On - Drain-Source Resistance: 9.2 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: DSO-8
Configuration: 1 N-Channel
Unit Weight: 0.019048 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 7.8 ns
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSO110N03MS BSO110N03MSGXT G SP000446062
RoHS:  Details
Id - Continuous Drain Current: 12.1 A
Rise Time: 4.4 ns
Maximum Operating Temperature: + 150 C
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Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock10000Update On
2025-06-13
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SPQ/MOQ1/1
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.70308

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stock27500Update On
2024-12-02
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Supplier SPQ/MOQ1/2500
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