BSZ0909NSATMA1
  • 量产中
  • PG-TSDSON-8 (3.3x3.3)
  • EAR99
产品描述:
Single N-Channel 34 V 12 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
FET Feature Standard
Package / Case 8-PowerTDFN
Drain to Source Voltage (Vdss) 34V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 36A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series OptiMOS™
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Digi-Reel®
Rds On (Max) @ Id, Vgs 12 mOhm @ 20A, 10V
Power - Max 2.1W
Supplier Device Package PG-TSDSON-8 (3.3x3.3)
Gate Charge (Qg) @ Vgs 17nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 1310pF @ 15V
ECCN EAR99
登录之后就可发表评论

请输入下方图片中的验证码:

验证码